Wolfspeed E4M0013120K SiC MOSFETS SiC, MOSFET,13mohm, 1200V, TO-247-4, ຍານພາຫະນະ, Gen4

Fall Time: 37 ns

Rise Time: 67 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 293 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 517 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 166 ns

Id - Continuous Drain Current: 153 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 17 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.8 V