Wolfspeed E3M0040120K SiC MOSFETS SiC, MOSFET, 40mO, 1200V, TO-247-4, ລົດຍົນ

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: Through Hole

Qg - Gate Charge: 94 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 242 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Id - Continuous Drain Current: 57 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 40 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.6 V