Wolfspeed C3M0120090J-TR Silicon Carbide MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm

Fall Time: 5 ns

Rise Time: 9 ns

Technology: SiC

Unit Weight: 1.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 17.3 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 83 W

Vgs - Gate-Source Voltage: - 8 V, + 18 V

Typical Turn-On Delay Time: 12.5 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6.7 S

Rds On - Drain-Source Resistance: 170 mOhms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V