Wolfspeed C3M0075120K1 Silicon Carbide Power MOSFET SiC, MOSFET, 75mohm, 1200V, TO-247-4 LP, ອຸດສາຫະກຳ

Fall Time: 11 ns

Rise Time: 22 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 53 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 145 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 29 ns

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10.5 S

Rds On - Drain-Source Resistance: 135 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.8 V