Wolfspeed C3M0021120J2-TR Silicon Carbide Power MOSFET SiC, MOSFET, 21mohm, 1200V, TO-263-7 XL T&R, ອຸດສາຫະກຳ

Fall Time: 13 ns

Rise Time: 34 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 169 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 54 ns

Id - Continuous Drain Current: 248 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 35 S

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.8 V