WeEn Semiconductors WMSC040H12B1P6T ໂມດູນ SiC MOSFET WMSC040H12B1P/WeEnPACK-B1/ການປະຕິບັດມາກ*ຖົງຖອຍ,EPE ຫຼື BLISTER

Width: 33.8 mm

Height: 11.95 mm

Length: 48 mm

Fall Time: 17 ns

Rise Time: 8 ns

Technology: SiC

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

If - Forward Current: 24 A

Pd - Power Dissipation: 105 W

Vgs - Gate-Source Voltage: - 4 V, + 18 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 38 ns

Id - Continuous Drain Current: 45 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 31.8 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V