WeEn Semiconductors BUJD203A,127 BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣີ NPN 425 V 4 A

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 80 W

DC Current Gain hFE Max: 32

Collector- Base Voltage VCBO: 850 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 425 V

Collector-Emitter Saturation Voltage: 290 mV