Vishay SQJ262EP-T1_BE3 MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFE

Fall Time: 10 ns, 10 ns

Rise Time: 3 ns, 3 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 6.5 nC, 14.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 27 W, 48 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns, 13 ns

Typical Turn-Off Delay Time: 15 ns, 23 ns

Id - Continuous Drain Current: 15 A, 40 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 35.5 mOhms, 15.5 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V, 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V, 2.5 V