Vishay SQJ123ELP-T1_GE3 MOSFETs P-CHANNEL 12-V (D-S) 175C MOSFET

Fall Time: 126 ns

Rise Time: 53 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 120 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 375 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 31 ns

Typical Turn-Off Delay Time: 181 ns

Id - Continuous Drain Current: 238 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 82 S

Rds On - Drain-Source Resistance: 4 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V