Vishay SQJ116EP-T1_GE3 MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET

Fall Time: 4 ns

Rise Time: 3 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1-N-Channel

Qg - Gate Charge: 84 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 88 W

Vgs - Gate-Source Voltage: 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 278 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 44 S

Rds On - Drain-Source Resistance: 3 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V