Vishay SISF54DN-T1-GE3 MOSFETs

Technology: Si

Mounting Style: SMD/SMT

Qg - Gate Charge: 12 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, NPN

Pd - Power Dissipation: 5.2 W

Vgs - Gate-Source Voltage: - 12 V, + 16 V

Id - Continuous Drain Current: 118 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3.1 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V