Vishay SIR512DP-T1-RE3 MOSFETs SOT669 100V 100A N-CH MOSFET

Fall Time: 11 ns

Rise Time: 11 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 30.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 34 ns

Id - Continuous Drain Current: 100 A

Forward Transconductance - Min: 75 S

Rds On - Drain-Source Resistance: 4.5 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V