Vishay SIHK075N60EF-T1GE3 MOSFETs PWRPK 600V 33A EF ຊຸດ

Fall Time: 52 ns

Rise Time: 66 ns

Technology: Si

Qg - Gate Charge: 72 nC

Pd - Power Dissipation: 192 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 33 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 61 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5 V