Vishay SIHH125N65E-T1-GE3 MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V

Fall Time: 26 ns

Rise Time: 59 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: N-Channel Power MOSFET

Qg - Gate Charge: 38 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 174 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 25 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 11 S

Rds On - Drain-Source Resistance: 120 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5 V