Vishay Siliconix SQJ469EP-T1_GE3 MOSFETs 80V 32A 100W AEC-Q101 ຜ່ານການຮັບຮອງ AEC-Q101

Width: 5.13 mm

Height: 1.04 mm

Length: 6.15 mm

Fall Time: 40 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 101 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 150 ns

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 35 S

Rds On - Drain-Source Resistance: 25 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V