Vishay Siliconix SQJ401EP-T2_GE3 MOSFETs RECOMMENDED ALT SQJ4

Technology: Si

Unit Weight: 187 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 109 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 83 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 6 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 600 mV