Vishay Siliconix SISH615ADN-T1-GE3 MOSFETs -20V Vds; 12V Vgs PowerPAK 1212-8SH

Fall Time: 26 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 488.500 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 183 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 52 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 41 ns

Typical Turn-Off Delay Time: 75 ns

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 82 S

Rds On - Drain-Source Resistance: 4.4 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V