Vishay Siliconix SIS903DN-T1-GE3 MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8

Fall Time: 63 ns

Rise Time: 54 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 28 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 23 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 135 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 32 S

Rds On - Drain-Source Resistance: 20.1 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV