Vishay Siliconix SIR882BDP-T1-RE3 MOSFETs SO8 100V 67.5A N-CH

Fall Time: 10 ns

Rise Time: 28 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 54 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 83.3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 31 ns

Typical Turn-Off Delay Time: 38 ns

Id - Continuous Drain Current: 67.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 82 S

Rds On - Drain-Source Resistance: 6.9 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V