Vishay Siliconix SIHH11N60E-T1-GE3 MOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8

Width: 8 mm

Height: 1 mm

Length: 8 mm

Fall Time: 21 ns

Rise Time: 21 ns

Technology: Si

Unit Weight: 50 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 31 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 114 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 39 ns

Id - Continuous Drain Current: 11 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 295 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V