Vishay Siliconix SIDR626LDP-T1-RE3 MOSFETs POWRPK N CHAN 60V

Fall Time: 20 ns

Rise Time: 235 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 89 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 125 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 47 ns

Id - Continuous Drain Current: 204 A

Maximum Operating Temperature: + 155 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 140 S

Rds On - Drain-Source Resistance: 1.2 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V