Vishay Siliconix SI2316BDS-T1-BE3 MOSFETs SOT23 N CHAN 30V

Fall Time: 7 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3.16 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.66 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.5 ns

Typical Turn-Off Delay Time: 12 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 3 V