ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ
Fall Time: 2 ns, 10 ns, 19 ns
Rise Time: 3 ns, 9 ns, 12 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Triple
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel, 1 P-Channel
Qg - Gate Charge: 14 nC, 23 nC, 30.2 nC
Number of Channels: 3 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 48 W, 60 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Typical Turn-On Delay Time: 7 ns, 8 ns, 10 ns
Typical Turn-Off Delay Time: 15 ns, 22 ns, 43 ns
Id - Continuous Drain Current: 20 A, 30 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 16 S, 19 S, 65 S
Rds On - Drain-Source Resistance: 9.2 mOhms, 30 mOhms, 60 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V, 200 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V, 2.5 V
