Vishay General Semiconductor SQJQ906EL-T1_GE3 MOSFETs 40V Vds 160A Id AEC-Q101 ຜ່ານການຮັບຮອງ Q101

Fall Time: 3 ns, 3 ns

Rise Time: 3 ns, 3 ns

Technology: Si

Unit Weight: 50 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 45 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 187 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns, 10 ns

Typical Turn-Off Delay Time: 25 ns, 25 ns

Id - Continuous Drain Current: 160 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 86 S, 86 S

Rds On - Drain-Source Resistance: 3.6 mOhms, 3.6 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V