Vishay General Semiconductor SQJA81EP-T1_GE3 MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET

Fall Time: 6 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 187 mg

Channel Mode: Enhancement

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 52 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 68 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 33 ns

Id - Continuous Drain Current: 46 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 17.3 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V