Vishay General Semiconductor SQ7415AENW-T1_GE3 MOSFETs P Ch -60Vds 20Vgs AEC-Q101 ຜ່ານການຮັບຮອງ Q101

Width: 3.3 mm

Height: 1.04 mm

Length: 3.3 mm

Fall Time: 8 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 38 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 53 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 37 ns

Id - Continuous Drain Current: 16 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 13 S

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V