Vishay General Semiconductor SQ4940AEY-T1_GE3 MOSFETs 40V 8A 4W AEC-Q101 ຜ່ານການຮັບຮອງ AEC-Q101

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 9 ns

Rise Time: 13 ns

Technology: Si

Unit Weight: 187 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 43 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 4 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 20 mOhms, 20 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V