Vishay General Semiconductor SQ2325ES-T1_GE3 MOSFETs P-Chnl 150-V (D-S) AEC-Q101 ທີ່ຜ່ານການຮັບຮອງ AEC-Q101

Fall Time: 10 ns

Rise Time: 14 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 10 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 840 mA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.2 S

Rds On - Drain-Source Resistance: 1.3 Ohms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V