Vishay General Semiconductor SQ2319ADS-T1_GE3 MOSFETs P Ch -40Vds 20Vgs AEC-Q101 ຜ່ານການຮັບຮອງ AEC-Q101

Width: 1.6 mm

Height: 1.45 mm

Length: 2.9 mm

Fall Time: 17 ns

Rise Time: 18 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 10.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 4.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 75 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V