Vishay General Semiconductor SQ1440EH-T1_GE3 MOSFETs 60V Vds +/-20V Vgs AEC-Q101 ທີ່ຜ່ານການຮັບຮອງ

Width: 1.25 mm

Height: 1 mm

Length: 2.1 mm

Fall Time: 30 ns

Rise Time: 23 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 5.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5.8 ns

Typical Turn-Off Delay Time: 10 ns

Id - Continuous Drain Current: 1.7 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6 S

Rds On - Drain-Source Resistance: 85 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V