Vishay General Semiconductor SIZ926DT-T1-GE3 MOSFETs 25V Vds 16V Vgs PowerPAIR 6 x 5

Fall Time: 8 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 337.318 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 12.5 nC, 27 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 20.2 W, 40 W

Vgs - Gate-Source Voltage: - 12 V, + 16 V

Typical Turn-On Delay Time: 8 ns, 10 ns

Typical Turn-Off Delay Time: 12 ns, 17 ns

Id - Continuous Drain Current: 40 A, 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40 S, 55 S

Rds On - Drain-Source Resistance: 2.2 mOhms, 4.8 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V