Vishay General Semiconductor SIZ904DT-T1-GE3 MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5

Fall Time: 10 ns

Rise Time: 12 ns

Technology: Si

Unit Weight: 337.318 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 12 nC, 23 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 20 W, 33 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 13 ns

Id - Continuous Drain Current: 12 A, 16 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 17 S, 24 S

Rds On - Drain-Source Resistance: 24 mOhms, 13.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 1.2 V