Vishay General Semiconductor SIZ710DT-T1-GE3 MOSFETs 20V Vds 20V Vgs PowerPAIR 6 x 3.7

Fall Time: 12 ns, 12 ns

Rise Time: 15 ns, 15 ns

Technology: Si

Unit Weight: 337.318 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 18 nC, 60 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 27 W, 48 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns, 25 ns

Typical Turn-Off Delay Time: 20 ns, 30 ns

Id - Continuous Drain Current: 16 A, 35 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 45 S, 85 S

Rds On - Drain-Source Resistance: 6.8 mOhms, 3.3 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V