Vishay General Semiconductor SIZ350DT-T1-GE3 MOSFETs 30V Vds 16V Vgs PowerPAIR 3 x 3

Fall Time: 10 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 143.050 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 20.3 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 16.7 W

Vgs - Gate-Source Voltage: - 12 V, + 16 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 46 S

Rds On - Drain-Source Resistance: 6.75 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V