Vishay General Semiconductor SIZ260DT-T1-GE3 MOSFETs DUAL N-CHANNEL 80-V PowerPAIR 3 x 3S

Fall Time: 25 ns, 20 ns

Rise Time: 55 ns, 42 ns

Technology: Si

Unit Weight: 143.050 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 13.1 nC, 13.3 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 33 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 24 ns

Id - Continuous Drain Current: 24.7 A, 24.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 24.5 mOhms, 24.7 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V