Vishay General Semiconductor SISS63DN-T1-GE3 MOSFETs P-CHANNEL 20V PowerPAK 1212-8S

Fall Time: 25 ns, 70 ns

Rise Time: 28 ns, 60 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 72.2 nC, 157.2 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 65.8 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 20 ns, 40 ns

Typical Turn-Off Delay Time: 80 ns, 100 ns

Id - Continuous Drain Current: 127.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 75 S

Rds On - Drain-Source Resistance: 2.7 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V