Vishay General Semiconductor SISS28DN-T1-GE3 MOSFETs N-Ch 25V Vds 21.8nC Qg ປົກກະຕິ

Width: 3.3 mm

Height: 1.04 mm

Length: 3.3 mm

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 75 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 57 W

Vgs - Gate-Source Voltage: - 12 V, + 16 V

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.52 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1 V