Vishay General Semiconductor SISS23DN-T1-GE3 MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8S

Width: 3.3 mm

Height: 1.04 mm

Length: 3.3 mm

Fall Time: 50 ns

Rise Time: 50 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 300 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 57 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 140 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 44 S

Rds On - Drain-Source Resistance: 3.5 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 900 mV