Vishay General Semiconductor SISS10ADN-T1-GE3 MOSFETs 40V Vds; 20/-16V Vgs PowerPAK 1212-8S

Fall Time: 5 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 61 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 56.8 W

Vgs - Gate-Source Voltage: - 16 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 31.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 80 S

Rds On - Drain-Source Resistance: 2.65 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V