Vishay General Semiconductor SIR826DP-T1-GE3 MOSFETs 80V 4.8mOhm@10V 60A N-Ch MV T-FET

Width: 5.15 mm

Height: 1.04 mm

Length: 6.15 mm

Fall Time: 8 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 60 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 104 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 36 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 80 S

Rds On - Drain-Source Resistance: 4.8 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V