Vishay General Semiconductor SIR680ADP-T1-RE3 MOSFETs N-CHANNEL 80V PowerPAK SO-8

Fall Time: 9 ns, 12 ns

Rise Time: 8 ns, 15 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: N - Channel

Qg - Gate Charge: 43 nC, 55 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 104 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 17 ns, 19 ns

Typical Turn-Off Delay Time: 30 ns, 30 ns

Id - Continuous Drain Current: 125 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 68 S

Rds On - Drain-Source Resistance: 2.88 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V