Vishay General Semiconductor SIJA52DP-T1-GE3 MOSFETs 40V Vds 20V Vgs PowerPAK SO-8L

Width: 5.13 mm

Height: 1.04 mm

Length: 6.15 mm

Fall Time: 9 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 150 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 48 W

Vgs - Gate-Source Voltage: - 16 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 38 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.7 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.4 V