Vishay General Semiconductor SIA929DJ-T1-GE3 MOSFETs -30V Vds 12V Vgs PowerPAK SC-70

Fall Time: 10 ns, 10 ns

Rise Time: 18 ns, 18 ns

Technology: Si

Unit Weight: 28 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 21 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 7.8 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 15 ns, 15 ns

Typical Turn-Off Delay Time: 22 ns, 22 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S, 10 S

Rds On - Drain-Source Resistance: 52 mOhms, 52 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V