Vishay General Semiconductor SI7540ADP-T1-GE3 MOSFETs -20V Vds 12V Vgs PowerPAK SO-8

Fall Time: 12 ns, 11 ns

Rise Time: 45 ns, 50 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 18 nC, 32 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.6 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 12 ns, 15 ns

Typical Turn-Off Delay Time: 22 ns, 30 ns

Id - Continuous Drain Current: 8 A, 6.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 55 S, 24 S

Rds On - Drain-Source Resistance: 15 mOhms, 28 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V