Vishay General Semiconductor SI7153DN-T1-GE3 MOSFETs -30V Vds 25V Vgs PowerPAK 1212-8

Fall Time: 15 ns

Rise Time: 46 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 62 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 52 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 36 ns

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 44 S

Rds On - Drain-Source Resistance: 9.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V