Vishay General Semiconductor SI6926ADQ-T1-E3 MOSFETs 20V Vds 8V Vgs TSSOP-8

Width: 3 mm

Height: 1.2 mm

Length: 4.4 mm

Fall Time: 9 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 158 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 10.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 26 S

Rds On - Drain-Source Resistance: 30 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV