Vishay General Semiconductor SI4151DY-T1-GE3 MOSFETs SO8 P CHAN 30V

Fall Time: 20 ns

Rise Time: 67 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 28 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 5.6 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 20.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 37 S

Rds On - Drain-Source Resistance: 7.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V