Vishay General Semiconductor SI1032R-T1-GE3 MOSFETs 20V 200mA 280mW 5.0ohm @ 4.5V

Width: 0.76 mm

Height: 0.8 mm

Length: 1.575 mm

Technology: Si

Unit Weight: 2 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 750 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 280 mW

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Id - Continuous Drain Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV