Toshiba TW048N65C,S1F SiC MOSFETS G3 650V SiC-MOSFET TO-247 48mohm

Fall Time: 32 ns

Rise Time: 43 ns

Technology: SiC

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 41 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 132 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 69 ns

Typical Turn-Off Delay Time: 68 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 65 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5 V