Toshiba TK14G65W,RQ MOSFETs Power MOSFET N-Channel

Width: 4.5 mm

Height: 10.4 mm

Length: 10 mm

Fall Time: 7 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 2.387 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 35 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 130 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 60 ns

Typical Turn-Off Delay Time: 110 ns

Id - Continuous Drain Current: 13.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 220 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V